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Comparison of ill-nitride nanotubes: Atomistic simulations
- Authors
- Kang, J.W.; Hwang, H.J.
- Issue Date
- Mar-2004
- Publisher
- TRANS TECH PUBLICATIONS LTD
- Keywords
- BN; AIN and GaN nanotubes; atomistic simulations; Tersoff potential
- Citation
- DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2, v.449-4, no.II, pp 1185 - 1188
- Pages
- 4
- Journal Title
- DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2
- Volume
- 449-4
- Number
- II
- Start Page
- 1185
- End Page
- 1188
- ISSN
- 0255-5476
- Abstract
- We have investigated the single-wall boron-, aluminum- and gallium-nitride nanotubes using atomistic simulations based on the Tersoff potential. The Tersoff potential for III-nitride effectively describes the properties of III-nitride nanotubes. Structures, energetic and nanomechanics of III-nitride nanotubes were investigated and compared with each other. Young's moduli of III-N nanotubes were lower than that of CNT. Though the graphite-like sheet formation of AlN was very difficult, since the elastic energy per atom to curve the sheet into cylinder for AlN was very low, if graphite-like sheets of AlN were formed, the extra cost to produce the tubes would be very low.
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