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Annealing temperature effect of PbZr0.4Ti0.6O3 film on La1/2Sr1/2CoO3 bottom electrode
- Authors
- Kim, J.-H.; Koh, K.S.; Choo, W.K.
- Issue Date
- Mar-2004
- Publisher
- TRANS TECH PUBLICATIONS LTD
- Keywords
- sol-gel processes; X-ray methods; ferroelectric properties; PZT; LSCO
- Citation
- DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2, v.449-4, no.II, pp 957 - 960
- Pages
- 4
- Journal Title
- DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2
- Volume
- 449-4
- Number
- II
- Start Page
- 957
- End Page
- 960
- ISSN
- 0255-5476
- Abstract
- We have investigated the ferroelectric and electrical properties of PZT 40/60 films on the bottom La1/2Sr1/2CoO3(LSCO) electrode. The LSCO bottom electrode was sputtered on the SiO2/Si(100). As the annealing temperature of PZT capacitors on the LSCO is increased, the ferroelectric properties gradually increase with the annealing temperature up to 650degreesC. However, for the PZT capacitors annealed above 650degreesC, electrical measurement cannot be performed.
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Collections - College of Natural Sciences > Department of Chemistry > 1. Journal Articles
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