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Defect characterization in co-evaporated Cu2ZnSnSe4 thin film solar cell
- Authors
- Kim, Yongshin; Choi, In-Hwan
- Issue Date
- Sep-2016
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Cu2ZnSnSe4; CZTS; Solar cell; Defects; Admittance
- Citation
- CURRENT APPLIED PHYSICS, v.16, no.9, pp 944 - 948
- Pages
- 5
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 16
- Number
- 9
- Start Page
- 944
- End Page
- 948
- ISSN
- 1567-1739
1878-1675
- Abstract
- Cu2ZnSnSe4 (CZTSe) solar cell fabricated by selenization of co-evaporated Cu-Zn-Sn-Se precursor thin film exhibited 6.2% conversion efficiency. Defects in the solar cell were investigated by temperature-dependent capacitance-voltage and admittance spectroscopy. Capacitance-voltage measurements showed that the p-type conductivity of CZTSe absorber layer was mainly attributed to two acceptor levels with activation energy of 0.02 eV and 0.11 eV. The admittance spectra exhibited capacitance steps that might have originated from a defect level with activation energy of 0.16 eV. The effects of these defects on the solar cell were discussed. (C) 2016 Elsevier B.V. All rights reserved.
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