Simulation study of copper cluster deposition
- Authors
- Kang, J.C.; Kang, J.W.; Hwang, H.J.
- Issue Date
- Apr-2001
- Publisher
- Materials Research Society
- Citation
- Materials Research Society Symposium - Proceedings, v.672, pp O3.1.1 - O3.1.5
- Journal Title
- Materials Research Society Symposium - Proceedings
- Volume
- 672
- Start Page
- O3.1.1
- End Page
- O3.1.5
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/66213
- DOI
- 10.1557/proc-671-o3.1
- ISSN
- 0272-9172
- Abstract
- The ionized cluster beam deposition of Al and Cu clusters has been investigated with a classical molecular dynamics simulation and the Metropolis Monte Carlo simulation. The spreading of the cluster has been studied as functions of cluster size and initial cluster energy. When the local area reached local melting spot on the surface, around the impact point of an energetic cluster, during a few ps, intermixing was easily achieved and a good epitaxial film with optimum bulk density was formed. For uniform film growth using cluster impact, it is necessary to make the local area temperature higher than melting temperature on the surface around the impact point of an energetic cluster.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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