Ion implantation damage model for B, BF2, As, P, and Si in silicone
DC Field | Value | Language |
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dc.contributor.author | Son, MS | - |
dc.contributor.author | Hwang, HJ | - |
dc.date.accessioned | 2023-03-09T03:48:49Z | - |
dc.date.available | 2023-03-09T03:48:49Z | - |
dc.date.issued | 2000-01 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.issn | 2166-2746 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/66226 | - |
dc.description.abstract | In this article we describe a newly proposed and consistent damage model in Monte Carlo simulation for the accurate prediction of a three-dimensional as-implanted impurity profile and point defect profile induced by ion implantation in (100) crystal silicon. An empirical electronic energy loss model for B, BF2, As, P, and Si self-implants over a wide energy range has been proposed for silicon-based semiconductor device technology and development. Our model shows very good agreement with secondary ion mass spectrometry data over a wide energy range. For damage accumulation, we have considered the self-annealing effects by introducing our proposed nonlinear recombination probability function of each point defect for computational efficiency. For the damage profiles, we compared the published Rutherford backscattering spectrometry (RBS)/ channeling data with our results of phosphorus implants. Our damage model shows very reasonable agreements with the RBS/channeling experiments for phosphorus implants. (C) 2000 American Vacuum Society. [S0734-211X(00)09001-6]. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Ion implantation damage model for B, BF2, As, P, and Si in silicone | - |
dc.type | Article | - |
dc.identifier.doi | 10.1116/1.591238 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.18, no.1, pp 595 - 601 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000085375600106 | - |
dc.identifier.scopusid | 2-s2.0-0033683704 | - |
dc.citation.endPage | 601 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 595 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 18 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordPlus | MOLECULAR-DYNAMICS | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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