Ion implantation damage model for B, BF2, As, P, and Si in silicone
- Authors
- Son, MS; Hwang, HJ
- Issue Date
- Jan-2000
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.18, no.1, pp 595 - 601
- Pages
- 7
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 18
- Number
- 1
- Start Page
- 595
- End Page
- 601
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/66226
- DOI
- 10.1116/1.591238
- ISSN
- 1071-1023
2166-2746
- Abstract
- In this article we describe a newly proposed and consistent damage model in Monte Carlo simulation for the accurate prediction of a three-dimensional as-implanted impurity profile and point defect profile induced by ion implantation in (100) crystal silicon. An empirical electronic energy loss model for B, BF2, As, P, and Si self-implants over a wide energy range has been proposed for silicon-based semiconductor device technology and development. Our model shows very good agreement with secondary ion mass spectrometry data over a wide energy range. For damage accumulation, we have considered the self-annealing effects by introducing our proposed nonlinear recombination probability function of each point defect for computational efficiency. For the damage profiles, we compared the published Rutherford backscattering spectrometry (RBS)/ channeling data with our results of phosphorus implants. Our damage model shows very reasonable agreements with the RBS/channeling experiments for phosphorus implants. (C) 2000 American Vacuum Society. [S0734-211X(00)09001-6].
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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