Shallow dopant implant profiles prediction in silicon using efficient molecular dynamics computer schemes

Abstract

We simulated dopant profiles of ultra-low energy boron and arsenic implantations into silicon by using a new phenomenological local damage accumulation model and highly efficient molecular dynamics schemes. The proposed local damage accumulation model is composed of deposited energy, histroy of recoil event and heat conductance in a cell, and also considers the effects of self-relaxation and self-recombination. The results of MDRANGE with local damage accumulation model agree with the experimental results and results of other simulation. We also simulated various doses and various ultra-low energies boron ion and arsenic ion implantation and dopant distribution for sub 0.1 mu m technologies in real space. We obtained dopant profiles by real ion number corresponding to dose on 0.1 mu m x 0.1 mu m silicon surface in the < 100 > channeling direction. In the cases of both B and As, as ion dose and implant energy increase, dopant profiles are affected much by locally accumulated damage. Especially, dopant profiles are influenced by locally accumulated damage at doses above 10(14)/cm(2), regardless of implant energy.