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Engineering Charge Injection and Charge Transport for High Performance PbSe Nanocrystal Thin Film Devices and Circuits

Authors
Oh, Soong JuWang, ZhuqingBerry, Nathaniel E.Choi, Ji-HyukZhao, TianshuoGaulding, E. AshleyPaik, TaejongLai, YumingMurray, Christopher B.Kagan, Cherie R.
Issue Date
Nov-2014
Publisher
AMER CHEMICAL SOC
Keywords
PbSe; field effect transistor; charge injection; charge transport; bandlike transport; circuit
Citation
NANO LETTERS, v.14, no.11, pp 6210 - 6216
Pages
7
Journal Title
NANO LETTERS
Volume
14
Number
11
Start Page
6210
End Page
6216
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/66735
DOI
10.1021/1502491
ISSN
1530-6984
1530-6992
Abstract
We study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal-nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.
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