Low temperature NO2 sensing properties of RF-sputtered SnO-SnO2 heterojunction thin-film with p-type semiconducting behavior
DC Field | Value | Language |
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dc.contributor.author | Jeong, Hwan-Seok | - |
dc.contributor.author | Park, Min-Jae | - |
dc.contributor.author | Kwon, Soo-Hun | - |
dc.contributor.author | Joo, Hyo-Jun | - |
dc.contributor.author | Song, Sang-Hun | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.date.available | 2019-01-22T12:34:34Z | - |
dc.date.issued | 2018-10 | - |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.issn | 1873-3956 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/674 | - |
dc.description.abstract | In this work, a high-performance p-type semiconducting gas sensor was successfully fabricated based on a SnO-SnO2 p-n heterojunction thin-film formed via a radio-frequency (RF)-magnetron sputtering process. The structure, morphology, and chemical composition of the deposited thin-film were investigated using scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy, indicating that the thin-film had a microcrystalline structure and a mixed SnO and SnO2 phase. Compared to the previously reported p-type metal oxide semiconductor-based gas sensors, the gas sensor in this study exhibited competitive sensing performance for NO2 gas with a maximum response of 4.35-10 ppm NO2 at a low operating temperature of 60 degrees C, although it was fabricated via a simple RF- magnetron sputtering process. Moreover, the SnO-SnO2 p-n heterojunction thin-film gas sensor exhibited a high sensing selectivity to NO2 gas. The enhanced NO2-sensing performance of the fabricated gas sensor at low operating temperatures is possibly attributed to the formation of the SnO-SnO2 p-n junctions at the surface of the thin-film. The importance of this work is in the successful fabrication of the high-performance p-type semiconducting gas sensor using a simple and conventional RF-magnetron sputtering process. | - |
dc.format.extent | 7 | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.title | Low temperature NO2 sensing properties of RF-sputtered SnO-SnO2 heterojunction thin-film with p-type semiconducting behavior | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.ceramint.2018.06.189 | - |
dc.identifier.bibliographicCitation | CERAMICS INTERNATIONAL, v.44, no.14, pp 17283 - 17289 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000442714100146 | - |
dc.identifier.scopusid | 2-s2.0-85049058986 | - |
dc.citation.endPage | 17289 | - |
dc.citation.number | 14 | - |
dc.citation.startPage | 17283 | - |
dc.citation.title | CERAMICS INTERNATIONAL | - |
dc.citation.volume | 44 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordAuthor | P-type semiconducting gas sensor | - |
dc.subject.keywordAuthor | NO2 sensing | - |
dc.subject.keywordAuthor | SnO-SnO2 p-n heterojunction | - |
dc.subject.keywordAuthor | Thin-film | - |
dc.subject.keywordAuthor | RF-magnetron sputtering | - |
dc.subject.keywordPlus | GAS SENSORS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | ZNO NANORODS | - |
dc.subject.keywordPlus | N-TYPE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | SNO | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | SELECTIVITY | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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