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Temperature-Dependent Thermal Transport of Polycrystalline van der Waals Semimetallic PtSe2 Films

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dc.contributor.authorPark, No-Won-
dc.contributor.authorLee, Hyejeong-
dc.contributor.authorChoi, Jae-Won-
dc.contributor.authorShin, Hosun-
dc.contributor.authorKang, Min-Sung-
dc.contributor.authorKim, Si-Hoo-
dc.contributor.authorCho, Jung-Min-
dc.contributor.authorKim, Min-Jeong-
dc.contributor.authorKim, Gil-Sung-
dc.contributor.authorLee, Sang Kwon-
dc.date.accessioned2023-09-12T07:40:05Z-
dc.date.available2023-09-12T07:40:05Z-
dc.date.issued2023-07-
dc.identifier.issn1932-7447-
dc.identifier.issn1932-7455-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/67558-
dc.description.abstractWe report both phononic and electronic transports ofpolycrystallinelarge-area platinum diselenide (PtSe2) thin films by measuringin-plane thermal conductivity and the Seebeck coefficient using asuspended bridge-type method and a strain gauge-controlled suspendplatform, respectively. We observe the greatly suppressed in-planethermal conductivity of & SIM;2.6 W/m & BULL;K, which is approximately670% suppressed value, for 11 nm thick polycrystalline PtSe2 films as compared to that of an exfoliated similarly thick in-planesingle-crystalline PtSe2 layer at 300 K. This reductionis attributed to the enhanced phonon scattering in polycrystallinePtSe(2) thin films. The measured in-plane Seebeck coefficientand electrical conductivity of the samples are as high as & SIM;79 & mu;V/K and & SIM;416 S/cm at 300 K, respectively. Our findingscan pave the way toward an effective strategy for promising large-areaTE energy harvesting devices with a high figure-of-merit in 2D semimetallictransition-metal dichalcogenide materials.-
dc.format.extent6-
dc.language영어-
dc.language.isoENG-
dc.publisherAMER CHEMICAL SOC-
dc.titleTemperature-Dependent Thermal Transport of Polycrystalline van der Waals Semimetallic PtSe2 Films-
dc.typeArticle-
dc.identifier.doi10.1021/acs.jpcc.3c03089-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICAL CHEMISTRY C, v.127, no.28, pp 13556 - 13561-
dc.description.isOpenAccessN-
dc.identifier.wosid001024788900001-
dc.identifier.scopusid2-s2.0-85164941612-
dc.citation.endPage13561-
dc.citation.number28-
dc.citation.startPage13556-
dc.citation.titleJOURNAL OF PHYSICAL CHEMISTRY C-
dc.citation.volume127-
dc.type.docTypeArticle-
dc.publisher.location미국-
dc.subject.keywordPlusTHERMOELECTRIC PERFORMANCE-
dc.subject.keywordPlusCONDUCTIVITY-
dc.subject.keywordPlusFIGURE-
dc.subject.keywordPlusMERIT-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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