Solution-processed amorphous zinc indium tin oxide thin-film transistors with high stability under AC stress
DC Field | Value | Language |
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dc.contributor.author | Ho, Dongil | - |
dc.contributor.author | Jeong, Hyewon | - |
dc.contributor.author | Park, Hun-Bum | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.contributor.author | Kim, Myung-Gil | - |
dc.contributor.author | Kim, Choongik | - |
dc.date.accessioned | 2023-11-03T02:40:13Z | - |
dc.date.available | 2023-11-03T02:40:13Z | - |
dc.date.issued | 2023-10 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/68367 | - |
dc.description.abstract | The stable operation behavior of thin-film transistors (TFTs) in pixel circuits under AC stress is crucial for high-performance active-matrix displays. However, conventional amorphous indium-gallium-zinc oxide (a-IGZO) TFTs exhibit a reduction in on-current (Ion) and the hump phenomenon of electrical characteristics when exposed to dynamic AC drain stress. In contrast, amorphous zinc-indium-tin oxide (a-ZITO) TFTs exhibit superior resistance to acceptor-like trap generation caused by impact ionization. The tetrahedral Zn site and strong chemical bonding of the Sn site in the a-ZITO network enhance defect tolerance against hot carriers, resulting in high stability against AC stress. This has been demonstrated through AC stress tests and capacitance-voltage (C-V) characterization for a-ZITOs with various Zn : In : Sn ratios of 2 : 1 : 1, 4 : 1 : 1, and 6 : 1 : 1. Compared to the Ion degradation rate of 69% for a-IGZO TFTs, the value significantly decreased to 15% by employing optimized a-ZITO with a synergistic composition ratio of 6 : 1 : 1. Overall, a-ZITO (6 : 1 : 1) TFTs exhibited high AC stress stability and a low threshold voltage shift of 0.4 V while maintaining high carrier mobilities of 10-11 cm2 V−1 s−1 with consistent performance regardless of the fabrication batch. © 2023 The Royal Society of Chemistry. | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Royal Society of Chemistry | - |
dc.title | Solution-processed amorphous zinc indium tin oxide thin-film transistors with high stability under AC stress | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/d3tc02439c | - |
dc.identifier.bibliographicCitation | Journal of Materials Chemistry C, v.11, no.39, pp 13395 - 13402 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 001079511200001 | - |
dc.identifier.scopusid | 2-s2.0-85172216366 | - |
dc.citation.endPage | 13402 | - |
dc.citation.number | 39 | - |
dc.citation.startPage | 13395 | - |
dc.citation.title | Journal of Materials Chemistry C | - |
dc.citation.volume | 11 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordPlus | HOT-CARRIER STRESS | - |
dc.subject.keywordPlus | DEGRADATION BEHAVIOR | - |
dc.subject.keywordPlus | INGAZNO TFTS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | GATE | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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