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Control of optical nanometer gap shapes made via standard lithography using atomic layer depositionopen access

Authors
Rhie, JiyeahLee, DukhyungBahk, Young-MiJeong, JeeyoonChoi, GeunchangLee, YoujinKim, SunghwanHong, SeunghunKim, Dai-Sik
Issue Date
Apr-2018
Publisher
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
Keywords
atomic layer deposition; standard lithography; nanometer gap; cross-sectional gap shape; field enhancement
Citation
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, v.17, no.2
Journal Title
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS
Volume
17
Number
2
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/69940
DOI
10.1117/1.JMM.17.2.023504
ISSN
1932-5150
1932-5134
Abstract
Atomic layer deposition is an efficient method for coating a few nanometer-thick alumina over a wafer scale. This method combined with the standard photolithography process was presented to fabricate metallic nanometer gaps that optically act in terahertz regimes. However, the cross-sectional view of the gap shape of the metal-insulator-metal nanogap structure varies depending on the conditions from the stepwise procedure. In specific, selecting photoresist materials, adding ion milling and chemical etching processes, and varying metal thicknesses and substrates result in various optical gap widths and shapes. Since the cross-sectional gap shape affects the field enhancement of the tunneled electromagnetic waves via the nanogap, the control of tailoring the gap shape is necessary. Thus, we present five different versions of fabricating quadrangle-ring-shaped nanometer gap arrays with varying different kinds of outcomes. We foresee the usage of the suggested category for Specific applications. (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License Distribution or repro-
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Choi, Geunchang
창의ICT공과대학 (전자전기공학부)
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