Efficient electroluminescence in doped-GaAs via terahertz metamaterials
- Authors
- Kang, Taehee; Song, Jindong; Kim, Dai-Sik; Choi, Geunchang
- Issue Date
- Oct-2023
- Publisher
- IOP Publishing Ltd
- Keywords
- Terahertz; luminescence; impact ionization; GaAs; metamaterial
- Citation
- APPLIED PHYSICS EXPRESS, v.16, no.10
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 16
- Number
- 10
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/70208
- DOI
- 10.35848/1882-0786/acff38
- ISSN
- 1882-0778
1882-0786
- Abstract
- We investigate the highly efficient terahertz nonlinearity exhibited by n-type GaAs crystals under metallic metamaterials. An intense THz field applied to the metamaterials leads to impact ionization in the GaAs substrate, which emits electroluminescence in the near-infrared region. Even for a similar THz field strength, n-type GaAs emits near-infrared photons more efficiently than semi-insulating GaAs. We analyzed the luminescence lineshapes and intensity as a function of the excitation field strength, using Fermi-Dirac statistics and the density of states in the conduction band to quantify electron density and locate the Fermi level after the relaxation of excited hot electrons.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/70208)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.