Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mahata, Chandreswar | - |
dc.contributor.author | Kim, Wonwoo | - |
dc.contributor.author | Kim, Shiwhan | - |
dc.contributor.author | Ismail, Muhammad | - |
dc.contributor.author | Kim, Min-Hwi | - |
dc.contributor.author | Kim, Sungjun | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.accessioned | 2024-02-19T02:30:46Z | - |
dc.date.available | 2024-02-19T02:30:46Z | - |
dc.date.issued | 2019-08 | - |
dc.identifier.issn | 1349-2543 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72120 | - |
dc.description.abstract | Here, the resistive switching properties of Cu/Al2O3/p-Si and Cu/HfO2/p-Si devices are investigated in details. Both memory switching and threshold switching behaviors observed under different current compliance conditions. The transition between two switching modes is possible. Cu ion diffusion form conductive filaments inside the insulator and formation/dissociation mechanism induced the switching phenomenon. The device performances under both memory switching and threshold switching are possible for non-volatile storage memory and selector applications, respectively. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
dc.title | Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices | - |
dc.type | Article | - |
dc.identifier.doi | 10.1587/elex.16.20190404 | - |
dc.identifier.bibliographicCitation | IEICE ELECTRONICS EXPRESS, v.16, no.16 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.wosid | 000484846900008 | - |
dc.identifier.scopusid | 2-s2.0-85113325922 | - |
dc.citation.number | 16 | - |
dc.citation.title | IEICE ELECTRONICS EXPRESS | - |
dc.citation.volume | 16 | - |
dc.type.docType | Article | - |
dc.publisher.location | 일본 | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | CBRAM | - |
dc.subject.keywordAuthor | copper | - |
dc.subject.keywordAuthor | high-k dielectric | - |
dc.subject.keywordPlus | MEMORY | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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