Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device
DC Field | Value | Language |
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dc.contributor.author | Kim, Sungjun | - |
dc.contributor.author | Chang, Yao-Feng | - |
dc.contributor.author | Kim, Min-Hwi | - |
dc.contributor.author | Bang, Suhyun | - |
dc.contributor.author | Kim, Tae-Hyeon | - |
dc.contributor.author | Chen, Ying-Chen | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.accessioned | 2024-02-19T03:00:25Z | - |
dc.date.available | 2024-02-19T03:00:25Z | - |
dc.date.issued | 2017-08 | - |
dc.identifier.issn | 1463-9076 | - |
dc.identifier.issn | 1463-9084 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72146 | - |
dc.description.abstract | Here we demonstrate low-power resistive switching in a Ni/SiNy/SiNx/p(++)-Si device by proposing a double-layered structure (SiNy/SiNx), where the two SiN layers have different trap densities. The LRS was measured to be as low as 1 nA at a voltage of 1 V, because the SiNx layer maintains insulating properties for the LRS. The single-layered device suffers from uncontrollability of the conducting path, accompanied by the inherent randomness of switching parameters, weak immunity to breakdown during the reset process, and a high operating current. On the other hand, for a double-layered device, the effective conducting path in each layer, which can determine the operating current, can be well controlled by the I-CC during the initial forming and set processes. A one-step forming and progressive reset process is observed for a low-power mode, which differs from the high-power switching mode that shows a two-step forming and reset process. Moreover, nonlinear behavior in the LRS, whose origin can be attributed to the P-F conduction and F-N tunneling driven by abundant traps in the silicon-rich SiNx layer, would be beneficial for next-generation nonvolatile memory applications by using a conventional passive SiNx layer as an active dielectric. | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/c7cp03120c | - |
dc.identifier.bibliographicCitation | PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.19, no.29, pp 18988 - 18995 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000406334300018 | - |
dc.identifier.scopusid | 2-s2.0-85026552569 | - |
dc.citation.endPage | 18995 | - |
dc.citation.number | 29 | - |
dc.citation.startPage | 18988 | - |
dc.citation.title | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | - |
dc.citation.volume | 19 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordPlus | RANDOM-ACCESS MEMORY | - |
dc.subject.keywordPlus | PROTON-EXCHANGE REACTIONS | - |
dc.subject.keywordPlus | A-SINX-H | - |
dc.subject.keywordPlus | BEHAVIORS | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | CONDUCTION | - |
dc.subject.keywordPlus | BILAYER | - |
dc.subject.keywordPlus | OXIDE | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Atomic, Molecular & Chemical | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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