Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory
DC Field | Value | Language |
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dc.contributor.author | Kim, Sungjun | - |
dc.contributor.author | Chang, Yao-Feng | - |
dc.contributor.author | Kim, Min-Hwi | - |
dc.contributor.author | Kim, Tae-Hyeon | - |
dc.contributor.author | Kim, Yoon | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.accessioned | 2024-02-19T03:00:30Z | - |
dc.date.available | 2024-02-19T03:00:30Z | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 1996-1944 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72150 | - |
dc.description.abstract | Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n(+) Si and Ni/SiNx/n(++) Si resistive-switching random access memory devices. The Ni/SiNx/n(++) Si device's Si bottom electrode had a higher dopant concentration (As ion > 10(1)9 cm(-3)) than the Ni/SiNx/n(+) Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 10(18) cm(-3)), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | MDPI | - |
dc.title | Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory | - |
dc.type | Article | - |
dc.identifier.doi | 10.3390/ma10050459 | - |
dc.identifier.bibliographicCitation | MATERIALS, v.10, no.5 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.wosid | 000404411000011 | - |
dc.identifier.scopusid | 2-s2.0-85019232349 | - |
dc.citation.number | 5 | - |
dc.citation.title | MATERIALS | - |
dc.citation.volume | 10 | - |
dc.type.docType | Article | - |
dc.publisher.location | 스위스 | - |
dc.subject.keywordAuthor | memory | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | self-compliance | - |
dc.subject.keywordAuthor | silicon nitride | - |
dc.subject.keywordPlus | PROTON-EXCHANGE REACTIONS | - |
dc.subject.keywordPlus | RANDOM-ACCESS MEMORY | - |
dc.subject.keywordPlus | DEVICE | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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