Ultraviolet-sensitive and power-efficient oxide phototransistor enabled by nanometer-scale thickness engineering of InZnO semiconductor and gate bias modulation
- Authors
- Zhang, Xuan; Ju, Eun Chong; Lee, Jong Min; Park, Sung Kyu; Cho, Sung Woon
- Issue Date
- Dec-2023
- Publisher
- American Institute of Physics Inc.
- Citation
- Applied Physics Letters, v.123, no.26
- Journal Title
- Applied Physics Letters
- Volume
- 123
- Number
- 26
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72708
- DOI
- 10.1063/5.0185490
- ISSN
- 0003-6951
1077-3118
- Abstract
- Amorphous oxide semiconductor photodetectors (PDs) are promising ultrasensitive and power-efficient ultraviolet (UV) PDs because they generate low dark current in the dark and exhibit high photoresponse under UV irradiation owing to their superior UV absorption and photocarrier transport characteristics. Herein, we demonstrate UV-sensitive and power-efficient oxide phototransistors through the nanometer-scale engineering of oxide semiconductors and appropriate modulation of gate bias conditions. The dark current and photocurrent of an oxide phototransistor exhibit a trade-off relationship in terms of the thickness of the oxide semiconductor film. Ultrathin InZnO is disadvantageous for fabricating UV-sensitive PDs because of its low photoresponse. In contrast, excessively thick InZnO is disadvantageous for fabricating power-efficient UV PDs owing to its high dark current. However, the InZnO film with an optimal film thickness of 8 nm can simultaneously provide the advantages of both ultrathin and excessively thick cases owing to its low intrinsic carrier concentration and sufficient UV absorption depth. Consequently, an InZnO phototransistor with high UV-sensing performance (Smax = 1.25 × 106), low-power operation capability (Idark = ∼10−13A), and excellent repeatability is realized by using an 8-nm-thick InZnO semiconductor and applying appropriate gate bias modulation (constant gate bias for maximized photosensitivity and temporal positive bias pulse for persistence photocurrent elimination). © 2023 Author(s).
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72708)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.