Deposition and optimization of Al-doped ZnO thin films fabricated by in-line sputtering system

Abstract

We deposited Al-doped ZnO (ZnO:Al) thin films on glass substrates (200 mm × 200 mm) by using in-line magnetron sputtering system. Effects of various deposition parameters such as working pressure, deposition power and substrate temperature on optoelectronic characteristics including surface-texture etching profiles were carefully investigated in this study. We found that relatively low working pressure and high deposition power offered to obtain enhanced conductivity and optical transmittance. Haze properties showed similar trend with the transmittance. Furthermore, surface-texture etching study exhibited good morphologies when the films were deposited at 200-300 °C. On the basis of these optimizations, we could find the deposition region that produces highly transparent and conductive properties including efficient light scattering capability. Copyright © The Korean Institute of Electrical Engineers.