InGaP//GaAs//c-Si 3-junction solar cells employing spectrum-splitting system
- Authors
- Kang, Dong-Won; Takiguchi, Yuki; Sichanugrist, Porponth; Konagai, Makoto
- Issue Date
- Jul-2016
- Publisher
- WILEY
- Keywords
- spectrum splitting; solar cell; InGaP; GaAs; c-Si
- Citation
- PROGRESS IN PHOTOVOLTAICS, v.24, no.7, pp 1016 - 1023
- Pages
- 8
- Journal Title
- PROGRESS IN PHOTOVOLTAICS
- Volume
- 24
- Number
- 7
- Start Page
- 1016
- End Page
- 1023
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/74933
- DOI
- 10.1002/pip.2753
- ISSN
- 1062-7995
1099-159X
- Abstract
- In this work, we practically demonstrated spectrum-splitting approach for advances in efficiency of photovoltaic cells. Firstly, a-Si:H//c-Si 2-junction configuration was designed, which exhibited 24.4% efficiency with the spectrum splitting at 620nm. Then, we improved the top cell property by employing InGaP cells instead of the a-Si:H, resulting in an achievement of efficiency about 28.8%. In addition, we constructed 3-junction spectrum-splitting system with two optical splitters, and GaAs solar cells as middle cell. This InGaP//GaAs//c-Si architecture was found to deliver 30.9% conversion efficiency. Our splitting system includes convex lenses for light concentration about 10suns, which provided concentrated efficiency exceeding 33.0%. These results suggest that our demonstration of 3-junction spectrum-splitting approach can be a promising candidate for highly efficient photovoltaic technologies. Copyright (c) 2016 John Wiley & Sons, Ltd.
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Collections - College of Engineering > School of Energy System Engineering > 1. Journal Articles
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