Novel application of MgF2 as a back reflector in a-SiOx:H thin-film solar cells
- Authors
- Kang, Dong-Won; Sichanugrist, Porponth; Konagai, Makoto
- Issue Date
- Aug-2014
- Publisher
- IOP PUBLISHING LTD
- Citation
- APPLIED PHYSICS EXPRESS, v.7, no.8
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 7
- Number
- 8
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/74940
- DOI
- 10.7567/APEX.7.082302
- ISSN
- 1882-0778
1882-0786
- Abstract
- We present high-quality a-SiOx:H solar cells with a very thin i-layer of 100 nm fabricated at a low temperature of 100 degrees C. To boost the photocurrent with such a thin absorber, we suggested the application of a low-index MgF2 buffer at the n-type nanocrystalline silicon oxide (n-nc-SiOx:H)/Ag nanotextured interface to suppress the absorption loss at the Ag back contact. The introduction of MgF2 of only a few nanometers (similar to 4 nm) thickness enhanced the reflection at the n-nc-SiOx:H/Ag interface, which resulted in the reinforcement of the short-circuit current by about 7.3% from 9.60 to 10.30 mA/cm(2) while almost maintaining V-oc and FF. We demonstrated the efficiency improvement of up to 7.66% by MgF2 at the back contact. (C) 2014 The Japan Society of Applied Physics
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Collections - College of Engineering > School of Energy System Engineering > 1. Journal Articles
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