Nanocrystalline silicon thin film transistor fabricated without any substrate heating for a flexible display

Abstract

We have fabricated nc-Si film and SiO(2) film without substrate heating using ICP-CVD. nc-Si film has amorphous incubation layer of 12 nm and crystalline volume fraction of 27%. Hydrogen plasma post-treatment was performed SiO(2) film and electrical characteristic of SiO(2) film was improved due to reduction of charges and annealing effect. And we have fabricated nc-Si TFT without substrate heating using ICP-CVD. Although there was no external heating, mobility of 642cm(2)/V.s was obtained. This result indicates that nc-Si TFT fabricated without any substrate heating may be suitable device for a flexible display.