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Nanocrystalline silicon thin film transistor fabricated without any substrate heating for a flexible display
- Issue Date
- 2008
- Publisher
- SOC INFORMATION DISPLAY
- Citation
- 2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III, v.39, pp 1262 - 1265
- Pages
- 4
- Journal Title
- 2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III
- Volume
- 39
- Start Page
- 1262
- End Page
- 1265
- ISSN
- 0097-966X
2168-0159
- Abstract
- We have fabricated nc-Si film and SiO(2) film without substrate heating using ICP-CVD. nc-Si film has amorphous incubation layer of 12 nm and crystalline volume fraction of 27%. Hydrogen plasma post-treatment was performed SiO(2) film and electrical characteristic of SiO(2) film was improved due to reduction of charges and annealing effect. And we have fabricated nc-Si TFT without substrate heating using ICP-CVD. Although there was no external heating, mobility of 642cm(2)/V.s was obtained. This result indicates that nc-Si TFT fabricated without any substrate heating may be suitable device for a flexible display.
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Collections - College of Engineering > School of Energy System Engineering > 1. Journal Articles
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