1-Dimensional fiber-based field-effect transistors made by low-temperature photochemically activated sol-gel metal-oxide materials for electronic textiles
DC Field | Value | Language |
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dc.contributor.author | Park, Chang Jun | - |
dc.contributor.author | Heo, Jae Sang | - |
dc.contributor.author | Kim, Kyung-Tae | - |
dc.contributor.author | Yi, Gyengmin | - |
dc.contributor.author | Kang, Jingu | - |
dc.contributor.author | Park, Jong S. | - |
dc.contributor.author | Kim, Yong-Hoon | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.available | 2019-03-08T15:57:16Z | - |
dc.date.issued | 2016-02 | - |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/8654 | - |
dc.description.abstract | We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles). By using low-temperature and a solution process, dense, pinhole-free, and relatively uniform metal-oxide layers were successfully deposited on a 1-dimensional fiber substrate. Particularly, the atomic layer deposited aluminum oxide gate dielectric layer, deposited at 100 degrees C, exhibited an extremely low leakage current density of similar to 10(-7) A cm(-2) and a high breakdown field of 4.1 MV cm(-1). Furthermore, the indium oxide F-FETs, which are photochemically activated at a low temperature, showed a field-effect mobility and on/off ratio of 3.7 cm (2) V-1 s(-1) and > 106, respectively, which we believe are the highest performance among fiber-type FETs reported to date. Based on these results, it is believed that the metal-oxide F-FETs may provide a basic building block to accomplish 2-D woven e-textiles in the future, provided further combining with the weaving and interconnection technologies. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | 1-Dimensional fiber-based field-effect transistors made by low-temperature photochemically activated sol-gel metal-oxide materials for electronic textiles | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/c5ra21613c | - |
dc.identifier.bibliographicCitation | RSC ADVANCES, v.6, no.22, pp 18596 - 18600 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000370717900086 | - |
dc.identifier.scopusid | 2-s2.0-84959019789 | - |
dc.citation.endPage | 18600 | - |
dc.citation.number | 22 | - |
dc.citation.startPage | 18596 | - |
dc.citation.title | RSC ADVANCES | - |
dc.citation.volume | 6 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordPlus | YARNS | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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