Study of Ethanolamine Surface Treatment on the Metal-Oxide Electron Transport Layer in Inverted InP Quantum Dot Light-Emitting Diodes
DC Field | Value | Language |
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dc.contributor.author | Jang, Ilwan | - |
dc.contributor.author | Kim, Jiwan | - |
dc.contributor.author | Park, Chang Jun | - |
dc.contributor.author | Ippen, Christian | - |
dc.contributor.author | Greco, Tonino | - |
dc.contributor.author | Oh, Min Suk | - |
dc.contributor.author | Lee, Jeongno | - |
dc.contributor.author | Kim, Won Keun | - |
dc.contributor.author | Wedel, Armin | - |
dc.contributor.author | Han, Chul Jong | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.available | 2019-03-08T16:37:51Z | - |
dc.date.issued | 2015-11 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.issn | 2093-6788 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/8968 | - |
dc.description.abstract | The present work shows the effect of ethanolamine surface treatment on inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a sol-gel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). First, ethanolamine was treated as a surface modifier on top of the ZnO electron transport layer. The optical performance of the QD-LED device was improved by the ethanolamine surface treatment. Second, low temperature annealing (<200 degrees C) was performed on the ZnO sol-gel electron transport layer, followed by an investigation of the effect of the ZnO annealing temperature. The efficiency of the inverted QD-LEDs was significantly enhanced (more than 3-fold) by optimization of the ZnO annealing temperature. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.title | Study of Ethanolamine Surface Treatment on the Metal-Oxide Electron Transport Layer in Inverted InP Quantum Dot Light-Emitting Diodes | - |
dc.type | Article | - |
dc.identifier.doi | 10.1007/s13391-015-4420-7 | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.11, no.6, pp 1066 - 1071 | - |
dc.identifier.kciid | ART002047381 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000364983700021 | - |
dc.identifier.scopusid | 2-s2.0-84947247865 | - |
dc.citation.endPage | 1071 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1066 | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 11 | - |
dc.type.docType | Article | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | InP QDs | - |
dc.subject.keywordAuthor | quantum dot light-emitting diode (QD-LED) | - |
dc.subject.keywordAuthor | ethanolamine | - |
dc.subject.keywordAuthor | zinc oxide | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | ELECTROLUMINESCENCE | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | DEVICES | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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