Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Jaekyun | - |
dc.contributor.author | Park, Chang Jun | - |
dc.contributor.author | Yi, Gyeongmin | - |
dc.contributor.author | Choi, Myung-Seok | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.available | 2019-03-08T16:40:07Z | - |
dc.date.issued | 2015-10 | - |
dc.identifier.issn | 1996-1944 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9085 | - |
dc.description.abstract | A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 degrees C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) treatment of the AlOx was employed in order to realize high-performance (>0.4 cm(2)/Vs saturation mobility) and low-operation-voltage (<5 V) diketopyrrolopyrrole (DPP)-based OTFTs on an ultra-thin polyimide film (3-m thick). Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages. | - |
dc.format.extent | 9 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | MDPI AG | - |
dc.title | Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.3390/ma8105352 | - |
dc.identifier.bibliographicCitation | MATERIALS, v.8, no.10, pp 6926 - 6934 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.wosid | 000366825500026 | - |
dc.identifier.scopusid | 2-s2.0-84946200491 | - |
dc.citation.endPage | 6934 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 6926 | - |
dc.citation.title | MATERIALS | - |
dc.citation.volume | 8 | - |
dc.type.docType | Article | - |
dc.publisher.location | 스위스 | - |
dc.subject.keywordAuthor | organic thin film transistor | - |
dc.subject.keywordAuthor | gate dielectric layer | - |
dc.subject.keywordAuthor | self-assembled monolayer | - |
dc.subject.keywordAuthor | photochemical activation | - |
dc.subject.keywordAuthor | low-temperature sol-gel method | - |
dc.subject.keywordAuthor | low-voltage operation | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | POLYMER SEMICONDUCTORS | - |
dc.subject.keywordPlus | BIOLOGICAL SENSORS | - |
dc.subject.keywordPlus | CHARGE-TRANSPORT | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | FACILE | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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