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Cited 5 time in webofscience Cited 7 time in scopus
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A novel high performance junctionless FETs with saddle-gate

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dc.contributor.authorJin, Xiaoshi-
dc.contributor.authorWu, Meile-
dc.contributor.authorLiu, Xi-
dc.contributor.authorChuai, Rongyan-
dc.contributor.authorKwon, Hyuck-In-
dc.contributor.authorLee, Jung-Hee-
dc.contributor.authorLee, Jong-Ho-
dc.date.available2019-03-08T16:41:05Z-
dc.date.issued2015-09-
dc.identifier.issn1569-8025-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9142-
dc.description.abstractIn this paper, a novel junctionless field effect transistors (JL FETs) with a saddle-gate structure has been proposed, and the I-V characteristics has been extensively studied by TCAD device simulation. The performance comparison between saddle-gate JL FETs and conventional triple-gate JL FETs has also been performed. The influence of gate dielectric on device property has also been investigated. A scheme of design optimization of saddle-gate JL FETs has also been proposed.-
dc.format.extent8-
dc.language영어-
dc.language.isoENG-
dc.publisherSPRINGER-
dc.titleA novel high performance junctionless FETs with saddle-gate-
dc.typeArticle-
dc.identifier.doi10.1007/s10825-015-0702-4-
dc.identifier.bibliographicCitationJOURNAL OF COMPUTATIONAL ELECTRONICS, v.14, no.3, pp 661 - 668-
dc.description.isOpenAccessN-
dc.identifier.wosid000358655300002-
dc.identifier.scopusid2-s2.0-84938287209-
dc.citation.endPage668-
dc.citation.number3-
dc.citation.startPage661-
dc.citation.titleJOURNAL OF COMPUTATIONAL ELECTRONICS-
dc.citation.volume14-
dc.type.docTypeArticle-
dc.publisher.location미국-
dc.subject.keywordAuthorSaddle-gate-
dc.subject.keywordAuthorJunctionless-
dc.subject.keywordAuthorField effect transistors-
dc.subject.keywordAuthorDesign optimization-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusSIMULATION-
dc.subject.keywordPlusMOSFET-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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