Subgap states in p-channel tin monoxide thin-film transistors from temperature-dependent field-effect characteristics
DC Field | Value | Language |
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dc.contributor.author | Jeong, Chan-Yong | - |
dc.contributor.author | Lee, Daeun | - |
dc.contributor.author | Han, Young-Joon | - |
dc.contributor.author | Choi, Yong-Jin | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.date.available | 2019-03-08T16:58:38Z | - |
dc.date.issued | 2015-08 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.issn | 1361-6641 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9314 | - |
dc.description.abstract | This paper experimentally investigates the subgap density of states (DOS) in p-type tin monoxide (SnO) thin-film transistors (TFTs) for the first time by using temperature-dependent field-effect measurements. As the temperature increases, the turn-on voltage moves in the positive direction, and the off-current and subthreshold slope continuously increase. We found that the conductivity of the SnO TFT obeys the Meyer-Neldel (MN) rule with a characteristic MN parameter of 28.6 eV(-1) in the subthreshold region, from which we successfully extracted the subgap DOS by combing the field-effect method and the MN relation. The extracted subgap DOS from fabricated p-type SnO TFTs are exponentially distributed in energy, and exhibit around two orders of magnitude higher values compared to those of the n-type amorphous indium-gallium-zinc oxide TFTs. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Subgap states in p-channel tin monoxide thin-film transistors from temperature-dependent field-effect characteristics | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/0268-1242/30/8/085004 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.30, no.8 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000362272600006 | - |
dc.identifier.scopusid | 2-s2.0-84938784319 | - |
dc.citation.number | 8 | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 30 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordAuthor | p-type SnO TFT | - |
dc.subject.keywordAuthor | subgap density of states | - |
dc.subject.keywordAuthor | temperature-dependent field-effect characteristics | - |
dc.subject.keywordAuthor | Meyer-Neldel rule | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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