High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma
DC Field | Value | Language |
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dc.contributor.author | Joo, Young-Hee | - |
dc.contributor.author | Kim, Chang-Il | - |
dc.date.available | 2019-03-08T17:37:34Z | - |
dc.date.issued | 2015-05 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.issn | 1879-2731 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9548 | - |
dc.description.abstract | We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF4/Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700W, a DC-bias voltage of -150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF4/Ar(= 25: 75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF4/Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.tsf.2015.03.054 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.583, no.1, pp 40 - 45 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000353812400007 | - |
dc.identifier.scopusid | 2-s2.0-84933055446 | - |
dc.citation.endPage | 45 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 40 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 583 | - |
dc.type.docType | Article | - |
dc.publisher.location | 스위스 | - |
dc.subject.keywordAuthor | IGZO | - |
dc.subject.keywordAuthor | Etching | - |
dc.subject.keywordAuthor | ICP | - |
dc.subject.keywordAuthor | XPS | - |
dc.subject.keywordAuthor | OES | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | TFTS | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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