Synthesis of Atomically Thin Transition Metal Disulfides for Charge Transport Layers in Optoelectronic Devices
- Authors
- Kwon, Ki Chang; Kim, Cheolmin; Quyet Van Le; Gim, Seungo; Jeon, Jong-Myeong; Ham, Ju Young; Lee, Jong-Lam; Jang, Ho Won; Kim, Soo Young
- Issue Date
- Apr-2015
- Publisher
- AMER CHEMICAL SOC
- Keywords
- transition metal disulfide; chemical vapor deposition; organic light-emitting diodes; organic photovoltaics; hole injection layer
- Citation
- ACS NANO, v.9, no.4, pp 4146 - 4155
- Pages
- 10
- Journal Title
- ACS NANO
- Volume
- 9
- Number
- 4
- Start Page
- 4146
- End Page
- 4155
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9718
- DOI
- 10.1021/acsnano.5b01504
- ISSN
- 1936-0851
1936-086X
- Abstract
- Metal sulfides (MeS2) such as MoS2 and WS2 were used as charge transport layers in organic light-emitting diodes (OLEDs) and organic photovoltaic (OPV) cells in-order to enhance the stability in air comparing to poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). MeS2 layers with a polycrystalline structure were synthesized by a chemical deposition method using uniformly spin-coated (NH4)MoS4,and (NH4)WS4 precursor solutions. The ultraviolet-ozone (UV-O-3) treatment on MeS2 leads to the removal of the surface contaminants produced by the transfer process, resulting in a uniform surface and an increase of the work function. The maximum luminance efficiencies of the OLEDs with UV-O-3-treated MoS2 and WS2 were 9.44 and 10.82 cd/A, respectively. The power conversion efficiencies of OPV cells based on UV-O-3-treated MoS2 and WS2 were 2.96 and 3.08%, respectively. These values correspond to-over 95% of those obtained with (PEDOT:PSS) based devices. Furthermore, OLEDs and OPV cells based on MeS2 showed two to six times longer stability in air compared with PEDOT:PSS based devices. These results suggest that UV-O-3-surface-treated MeS2 could be a promising candidate for a charge transport layer in optoelectronic devices.
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