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Photovoltaic Characteristics of Si Nanowires-Incorporated Pyramid-Textured Heterojunction Si Solar Cells

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dc.contributor.authorKim, Gil-Sung-
dc.contributor.authorPark, Min-Young-
dc.contributor.authorLee, Jae-Ho-
dc.contributor.authorYang, Seung-Hun-
dc.contributor.authorKim, Jae-Hoon-
dc.contributor.authorLee, Sang-Kwon-
dc.contributor.authorLee, Choong Hun-
dc.date.available2019-03-08T17:41:22Z-
dc.date.issued2015-04-
dc.identifier.issn1555-130X-
dc.identifier.issn1555-1318-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9733-
dc.description.abstractWe reported the morphological characteristics of SiNWs-incorporated pyramid-textured Si surface, and analyzed its photovoltaic performance in comparison with both pyramid-textured and planar Si solar cells. The power conversion efficiencies (PCEs) were determined to be approximately 6.4%, 9.5%, and 11.5%, respectively corresponding to planar, pyramid-textured, and SiNWs-incorporated pyramid-textured heterojunction Si solar cells coated with PEDOT: PSS layers. Furthermore, the SiNWs-incorporated pyramid-textured solar cell showed excellent photovoltaic performance with short current density (J(SC)) of 28.5 mA/cm(2), open-circuit voltage (V-OC) of 0.55 V, and fill factor (FF) of 71% under AM 1.5G illumination. This result suggested that the PEDOT: PSS-coated SiNWs-incorporated pyramid-textured heterojunction Si solar cell exhibits a remarkable suppression in reflectance at short wavelength range, which in turn leads to the highest photocurrent and PCE.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.titlePhotovoltaic Characteristics of Si Nanowires-Incorporated Pyramid-Textured Heterojunction Si Solar Cells-
dc.typeArticle-
dc.identifier.doi10.1166/jno.2015.1746-
dc.identifier.bibliographicCitationJOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.10, no.2, pp 277 - 281-
dc.description.isOpenAccessN-
dc.identifier.wosid000357170600023-
dc.identifier.scopusid2-s2.0-84931069325-
dc.citation.endPage281-
dc.citation.number2-
dc.citation.startPage277-
dc.citation.titleJOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS-
dc.citation.volume10-
dc.type.docTypeArticle-
dc.publisher.location미국-
dc.subject.keywordAuthorPyramid-
dc.subject.keywordAuthorSilicon Nanowires-
dc.subject.keywordAuthorPEDOT:PSS-
dc.subject.keywordAuthorHeterojunction Solar Cell-
dc.subject.keywordAuthorReflectance-
dc.subject.keywordAuthorPower Conversion Efficiency-
dc.subject.keywordPlusELECTRICAL-TRANSPORT-
dc.subject.keywordPlusSCHOTTKY DIODES-
dc.subject.keywordPlusSILICON-WAFERS-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusEFFICIENCY-
dc.subject.keywordPlusPERFORMANCE-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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