Photovoltaic Characteristics of Si Nanowires-Incorporated Pyramid-Textured Heterojunction Si Solar Cells
DC Field | Value | Language |
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dc.contributor.author | Kim, Gil-Sung | - |
dc.contributor.author | Park, Min-Young | - |
dc.contributor.author | Lee, Jae-Ho | - |
dc.contributor.author | Yang, Seung-Hun | - |
dc.contributor.author | Kim, Jae-Hoon | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.contributor.author | Lee, Choong Hun | - |
dc.date.available | 2019-03-08T17:41:22Z | - |
dc.date.issued | 2015-04 | - |
dc.identifier.issn | 1555-130X | - |
dc.identifier.issn | 1555-1318 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9733 | - |
dc.description.abstract | We reported the morphological characteristics of SiNWs-incorporated pyramid-textured Si surface, and analyzed its photovoltaic performance in comparison with both pyramid-textured and planar Si solar cells. The power conversion efficiencies (PCEs) were determined to be approximately 6.4%, 9.5%, and 11.5%, respectively corresponding to planar, pyramid-textured, and SiNWs-incorporated pyramid-textured heterojunction Si solar cells coated with PEDOT: PSS layers. Furthermore, the SiNWs-incorporated pyramid-textured solar cell showed excellent photovoltaic performance with short current density (J(SC)) of 28.5 mA/cm(2), open-circuit voltage (V-OC) of 0.55 V, and fill factor (FF) of 71% under AM 1.5G illumination. This result suggested that the PEDOT: PSS-coated SiNWs-incorporated pyramid-textured heterojunction Si solar cell exhibits a remarkable suppression in reflectance at short wavelength range, which in turn leads to the highest photocurrent and PCE. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Photovoltaic Characteristics of Si Nanowires-Incorporated Pyramid-Textured Heterojunction Si Solar Cells | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jno.2015.1746 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.10, no.2, pp 277 - 281 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000357170600023 | - |
dc.identifier.scopusid | 2-s2.0-84931069325 | - |
dc.citation.endPage | 281 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 277 | - |
dc.citation.title | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | - |
dc.citation.volume | 10 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Pyramid | - |
dc.subject.keywordAuthor | Silicon Nanowires | - |
dc.subject.keywordAuthor | PEDOT:PSS | - |
dc.subject.keywordAuthor | Heterojunction Solar Cell | - |
dc.subject.keywordAuthor | Reflectance | - |
dc.subject.keywordAuthor | Power Conversion Efficiency | - |
dc.subject.keywordPlus | ELECTRICAL-TRANSPORT | - |
dc.subject.keywordPlus | SCHOTTKY DIODES | - |
dc.subject.keywordPlus | SILICON-WAFERS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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