Electrical Transport Characteristics of PEDOT:PSS/n-Si Schottky Junction Diodes and Electrical Degradation in Hybrid Solar Cells
DC Field | Value | Language |
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dc.contributor.author | Hyung, Jung-Hwan | - |
dc.contributor.author | Kim, Gil-Sung | - |
dc.contributor.author | Jeong, Jin-Tak | - |
dc.contributor.author | Choi, In-Hwan | - |
dc.contributor.author | Hong, Chang-Hee | - |
dc.contributor.author | Yun, Seoungjin | - |
dc.contributor.author | Koh, Jung-Hyuk | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.date.available | 2019-03-08T17:41:25Z | - |
dc.date.issued | 2015-04 | - |
dc.identifier.issn | 1555-130X | - |
dc.identifier.issn | 1555-1318 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9736 | - |
dc.description.abstract | We have recently reported on the electrical transport characteristics of PEDOT:PSS/n-Si Schottky junction diodes, which demonstrated excellent rectifying behavior. In this study, we investigated in further detail the electrical transport properties of Schottky diodes and the electrical degradation in PEDOT:PSS-based solar cells. To examine the electrical properties, Schottky barrier heights, and ideality factors of Au/PEDOT:PSS/n-Si Schottky diodes, both current-voltage and capacitance-voltage measurements were conducted. In addition, we fabricated hybrid PEDOT:PSS/n-Si solar cells to compare the electrical degradation of the devices with and without polymethylmethacrylate (PMMA) layers. Our experimental results suggest that the presence of a PMMA layer in a PEDOT:PSS/n-Si solar cell significantly reduces the electrical degradation resulting from air exposures of up to 10 days. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Electrical Transport Characteristics of PEDOT:PSS/n-Si Schottky Junction Diodes and Electrical Degradation in Hybrid Solar Cells | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jno.2015.1736 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.10, no.2, pp 229 - 233 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000357170600013 | - |
dc.identifier.scopusid | 2-s2.0-84931077104 | - |
dc.citation.endPage | 233 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 229 | - |
dc.citation.title | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | - |
dc.citation.volume | 10 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | PEDOT:PSS | - |
dc.subject.keywordAuthor | Schottky Junction Diode | - |
dc.subject.keywordAuthor | Electrical Degradation | - |
dc.subject.keywordAuthor | Current-Voltage Measurement | - |
dc.subject.keywordAuthor | Power Conversion Efficiency | - |
dc.subject.keywordPlus | SILICON | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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