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Low-power transformer-based current-reuse injection-locked frequency divider

Authors
Ha, Keum-WonSung, Eun-TaekBaek, Donghyun
Issue Date
Jan-2015
Publisher
INST ENGINEERING TECHNOLOGY-IET
Keywords
low-power electronics; frequency dividers; injection locked oscillators; transformer cores; CMOS analogue integrated circuits; phase noise; integrated circuit noise; UHF integrated circuits; UHF oscillators; MMIC oscillators; low-power transformer-based current-reuse injection-locked frequency divider; ILFD; complementary G(m)-boosted Colpitts oscillator core; negative transconductance; power consumption; CMOS process; frequency 4; 93 GHz; frequency 870 MHz; power 1; 37 mW; power 2; 5 mW; voltage 1; 15 V; voltage 1; 3 V; size 0; 13 mum
Citation
ELECTRONICS LETTERS, v.51, no.2, pp 161 - U42
Journal Title
ELECTRONICS LETTERS
Volume
51
Number
2
Start Page
161
End Page
U42
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9965
DOI
10.1049/el.2014.4052
ISSN
0013-5194
1350-911X
Abstract
A novel low-power injection-locked frequency divider (ILFD) is proposed, in which a complementary G(m)-boosted Colpitts oscillator core is employed to improve negative transconductance (G(m)) and the current-reuse technique using a single transformer is applied to reduce the power consumption. The proposed ILFD exhibits a self-resonant frequency of 4.93 GHz with a maximum locking range of 870 MHz at 0 dBm of input power. The phase noises of the input and output signals are -128.54 and -134.53 dBc/Hz, respectively. The ILFD consumes 1.37 and 2.5 mW at 1.15 and 1.3 V, respectively. The chip area is 715.5 x 468 m(2) in a 0.13 m CMOS process. To the authors' knowledge, this is the first demonstration of the current-reuse ILFD.
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