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Dry etching characteristics of zinc oxide thin films in Cl2-based plasmaGo to Link

Woo, J.-C.; Ha, T.-K.; Li, C.; Kim, S.-H.; Park, J.-S.; Heo, K.-M.; Kim, C.-I.

ArticleIssue Date2011CitationTransactions on Electrical and Electronic Materials, v.12, no.2, pp 60 - 63Publisher한국전기전자재료학회
The dry etching characteristics of TiO2 thin films in N2/CF4/Ar plasmaGo to Link

Choi, K.-R.; Woo, J.-C.; Joo, Y.-H.; Chun, Y.-S.; Kim, C.-I.

ArticleIssue Date2014CitationTransactions on Electrical and Electronic Materials, v.15, no.1, pp 32 - 36Publisher한국전기전자재료학회
The dry etching of tin thin films using inductively coupled CF4/Ar PlasmaGo to Link

Woo, J.-C.; Choi, C.-A.; Joo, Y.-H.; Kim, H.-S.; Kim, C.-I.

ArticleIssue Date2013CitationTransactions on Electrical and Electronic Materials, v.14, no.2, pp 67 - 70Publisher한국전기전자재료학회
The use of inductively coupled CF4/Ar plasma to improve the etch rate of ZrO2 thin filmsGo to Link

Kim, H.-S.; Woo, J.-C.; Joo, Y.-H.; Kim, C.-I.

ArticleIssue Date2013CitationTransactions on Electrical and Electronic Materials, v.14, no.1, pp 12 - 15Publisher한국전기전자재료학회
The fabrication of an applicative device for trench width and depth using inductively coupled plasma and the bulk silicon etching processGo to Link

Woo, J.-C.; Choi, C.-A.; Kim, C.-I.

ArticleIssue Date2014CitationTransactions on Electrical and Electronic Materials, v.15, no.1, pp 49 - 54Publisher한국전기전자재료학회
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