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Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric Go to Link

Lee, Jae-Seung; Kim, Woo Hee; Oh, Il-Kwon; Kim, Min-Kyu; Lee, Gyeongho; Lee, Chang-Wan; Park, Jusang; Lansalot-Matras, Clement; Noh, Wontae; Kim, Hyungjun

ArticleIssue Date2014CitationApplied Surface Science, v.297, pp.16 - 21PublisherElsevier BV

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Browsing by Lee, Jae-SeungAuthor

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