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Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1-xGex (x=0-0.3)Go to Link

Lee, Woohui; Lee, Changmin; Kim, Jinyong; Lee, Jehoon; Eom, Deokjoon; Park, Jae Chan; Park, Tae Joo; Kim, Hyoungsub

ArticleIssue Date2021CitationJournal of Materials Chemistry C, v.9, no.5, pp 1829 - 1835PublisherRoyal Society of Chemistry
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