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SCISCIESCOPUS
Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studiesGo to Link

Rao, Peta Koteswara; Park, Byungguon; Lee, Sang-Tae; Noh, Young-Kyun; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2011CitationJOURNAL OF APPLIED PHYSICS, v.110, no.1PublisherAMER INST PHYSICS
SCISCIESCOPUS
Effects of reduced internal electric field in InGaN/pseudo-AlInGaN multi-quantum-well on forward leakage current and photocurrent propertiesGo to Link

Park, Byung-Guon; Maddaka, Reddeppa; Nguyen, Thi Kim Phung; Peta, Koteswara Rao; Noh, Young-Kyun; Oh, Jae-Eung; Kim, Moon-Deock

ArticleIssue Date2019CitationJOURNAL OF APPLIED PHYSICS, v.126, no.4PublisherAMER INST PHYSICS
SCISCIESCOPUS
High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (110) Si substrates grown by ammonia molecular beam epitaxyGo to Link

Noh, Young-Kyun; Lee, Sang-Tae; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2019CitationJOURNAL OF CRYSTAL GROWTH, v.509, pp 141 - 145PublisherELSEVIER SCIENCE BV
SCISCIESCOPUSKCI
Influence of an embedded low-temperature AlN strain relaxation layer on the strain states and the buffer characteristics of GaN films grown on (110) Si substrates by using ammonia molecular beam epitaxyGo to Link

Noh, Young-Kyun; Kwon, Han-Chul; Oh, Jae-Eung; Lee, Sang-Tae; Kim, Moon-Deock

ArticleIssue Date2015CitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.66, no.11, pp 1766 - 1770PublisherKOREAN PHYSICAL SOC
SCISCIESCOPUSKCI
Microstructural properties of GaN grown on a Si(110) substrate by gas-source molecular beam epitaxy: Dependence on the ammonia fluxGo to Link

Lee, Jong Hoon; Ryu, Hyun; Ahn, Sang Jung; Noh, Young-Kyun; Oh, Jae-Eung; Kim, Young Heon

ArticleIssue Date2015CitationCURRENT APPLIED PHYSICS, v.15, no.3, pp 232 - 237PublisherELSEVIER SCIENCE BV
SCISCIESCOPUSKCI
Optical and crystal properties of ammonia MBE-grown GaN layers on plasma-assisted MBE-grown AlN/Si (110) substratesGo to Link

Noh, Young-Kyun; Park, Chul-Hyun; Lee, Sang-Tae; Kim, Kyung-Jin; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2014CitationCURRENT APPLIED PHYSICS, v.14, no.supple.1, pp S29 - S33PublisherELSEVIER SCIENCE BV
SCISCIESCOPUS
Reduction of internal polarization fields in InGaN quantum wells by InGaN/AlGaN ultra-thin superlattice barriers with different indium (vol 110, 123108, 2011)Go to Link

Noh, Young-Kyun; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2012CitationJOURNAL OF APPLIED PHYSICS, v.111, no.3PublisherAMER INST PHYSICS
SCISCIESCOPUS
Reduction of internal polarization fields in InGaN quantum wells by InGaN/AlGaN ultra-thin superlattice barriers with different indium compositionGo to Link

Noh, Young-Kyun; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2011CitationJOURNAL OF APPLIED PHYSICS, v.110, no.12PublisherAMER INST PHYSICS
SCISCIESCOPUSKCI
Temperature- and Al/N ratio-dependent AlN seed layer formation on (110) Si substrates by using plasma-assisted molecular beam epitaxyGo to Link

Noh, Young-Kyun; Park, Chul-Hyun; Oh, Jae-Eung; Lee, Sang-Tae; Kim, Moon-Deock

ArticleIssue Date2014CitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.64, no.10, pp 1577 - 1580PublisherKOREAN PHYSICAL SOC
SCIESCOPUS
The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation terminationGo to Link

Ko, Kwang-Man; Seo, Jung-Han; Kim, Dong-Eun; Lee, Sang-Tae; Noh, Young-Kyun; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2009CitationNANOTECHNOLOGY, v.20, no.22PublisherIOP PUBLISHING LTD
SCISCIESCOPUS
Thickness dependence of temperature-induced emission mechanism in InGaN/AlGaN short-period superlatticesGo to Link

Noh, Young-Kyun; Seo, Jeong-Han; Choi, Hyo-Seok; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2012CitationJOURNAL OF APPLIED PHYSICS, v.112, no.4PublisherAMER INST PHYSICS
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