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Optical and crystal properties of ammonia MBE-grown GaN layers on plasma-assisted MBE-grown AlN/Si (110) substrates

Authors
Noh, Young-KyunPark, Chul-HyunLee, Sang-TaeKim, Kyung-JinKim, Moon-DeockOh, Jae-Eung
Issue Date
Mar-2014
Publisher
ELSEVIER SCIENCE BV
Keywords
Gallium nitride; Molecular beam epitaxy; V/III ratio; Defect annihilation
Citation
CURRENT APPLIED PHYSICS, v.14, no.supple.1, pp.S29 - S33
Indexed
SCIE
SCOPUS
KCI
Journal Title
CURRENT APPLIED PHYSICS
Volume
14
Number
supple.1
Start Page
S29
End Page
S33
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/23679
DOI
10.1016/j.cap.2013.11.047
ISSN
1567-1739
Abstract
GaN layers were grown by ammonia molecular beam epitaxy (NH3 MBE) on rf plasma MBE (rf-MBE) AlN grown on (110) Si substrates. The surface morphology of GaN epitaxial films is sensitive to the V/III ratio with the RHEED transition from 2D to 3D as NH3 beam equivalent pressure (BEP) increases. The measured FWHMs of X-ray rocking curve for slightly N-rich sample of 0.8 mu m thick are 665 and 961 arc-sec for (0002) and (10 (1) over bar2) peaks, respectively. Based on transmission electron microscopy studies, the reduction in rocking curve width is attributed to enhanced annihilation of dislocations during the initial stage of growth, which agrees with much higher luminescence intensity in room-temperature cathodoluminescence measurements. A kinetic growth model based on the reference [jae.] is used to explain the growth behavior of GaN layers with different NH3 BEP. (C) 2013 Elsevier B.V. All rights reserved.
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