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First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 sGo to Link

Noh, Tae Hyeon; Chen, Simin; Kim, Hyo-Bae; Jin, Taewon; Park, Seoung Min; An, Seong Ui; Sun, Xinkai; Kim, Jaekyun; Han, Jae-Hoon; Ahn, Ji-Hoon, et al.

ArticleIssue Date2024CitationNanoscale, v.16, no.35, pp 1 - 10PublisherRoyal Society of Chemistry
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