ScholarWorks@Hanyang University ERICA Campus

Browsing by Wen, Shi-JieAuthor

All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 10 of 10

SCISCIESCOPUS
A 65 nm Temporally Hardened Flip-Flop CircuitGo to Link

Li, Y. -Q.; Wang, H. -B.; Liu, Rui; Chen, Li; Nofal, Issam; Chen, Q. -Y.; He, A. -L.; Guo, Gang; Baeg, Sang H.; Wen, Shi-Jie, et al.

ArticleIssue Date2016CitationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.63, no.6, pp 2934 - 2940PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Assessing alpha-particle-induced SEU sensitivity of flip-chip bonded SRAM using high energy irradiationGo to Link

Khan, Saqib A.; Wen, Shi-Jie; Baeg, Sanghyeong

ArticleIssue Date2016CitationIEICE ELECTRONICS EXPRESS, v.13, no.17, pp 1 - 6PublisherIEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
SCISCIESCOPUS
Correctable and uncorrectable errors using large scale DRAM DIMMs in replacement network serversGo to Link

Baeg, Sanghyeon; Qasim, Mirza; Kwon, Junhyeong; Li, Tan; Gupta, Nilay; Wen, Shi-Jie; Kolli, Satyadev

ArticleIssue Date2019CitationMICROELECTRONICS RELIABILITY, v.99, pp 104 - 112PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCIESCOPUS
Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray RadiationGo to Link

Yun, Donghyuk; Park, Myungsang; Bak, Geunyong; Baeg, Sanghyeon; Wen, Shi-Jie

ArticleIssue Date2021CitationIEEE ACCESS, v.9, pp 137514 - 137523PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Modeling and analysis of single-event transient sensitivity of a 65 nm clock treeGo to Link

Li, Yuanqing; Chen, Li; Nofal, Issam; Chen, Mo; Wang, Haibin; Liu, Rui; Chen, Qingyu; Krstic, Milos; Shi, Shuting; Guo, Gang, et al.

ArticleIssue Date2018CitationMICROELECTRONICS RELIABILITY, v.87, pp 24 - 32PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCISCIESCOPUS
Stuck Bits Study in DDR3 SDRAMs Using 45-MeV Proton BeamGo to Link

Lim, Chulseung; Jeong, Hyun Soo; Bak, Geunyong; Baeg, Sanghyeon; Wen, Shi-Jie; Wong, Richard

ArticleIssue Date2015CitationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.62, no.2, pp 520 - 526PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Study of proton radiation effect to row hammer fault in DDR4 SDRAMsGo to Link

Lim, Chulseung; Park, Kyungbae; Bak, Geunyong; Yun, Donghyuk; Park, Myungsang; Baeg, Sanghyeon; Wen, Shi-Jie; Wong, Richard

ArticleIssue Date2018CitationMICROELECTRONICS RELIABILITY, v.80, pp 85 - 90PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCISCIESCOPUS
Supply Voltage Dependence of Heavy Ion Induced SEEs on 65 nm CMOS Bulk SRAMsGo to Link

Wu, Qiong; Li, Yuanqing; Chen, Li; He, Anlin; Guo, Gang; Baeg, Sang H.; Wang, Haibin; Liu, Rui; Li, Lixiang; Wen, Shi-Jie, et al.

ArticleIssue Date2015CitationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.62, no.4, pp 1898 - 1904PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Temperature Estimation of HBM2 Channels with Tail Distribution of Retention Errors in FPGA-HBM2 PlatformGo to Linkopen access

Kwon, Junhyeong; Wen, Shi-Jie; Fung, Rita; Baeg, Sanghyeon

ArticleIssue Date2023CitationELECTRONICS, v.12, no.1, pp 1 - 17PublisherMDPI
SCIESCOPUS
Write Recovery Time Degradation by Thermal Neutrons in DDR4 DRAM ComponentsGo to Link

Oh, Hyeongseok; Chun, Myungsun; Lee, Jiwon; Wen, Shi-Jie; Yu, Nick; Park, Byung-Gun; Baeg, Sanghyeon

ArticleIssue Date2023CitationIEEE International Reliability Physics Symposium Proceedings, v.2023-March, pp 1 - 6PublisherIEEE
1
CONTACT US

RSS_1.0 RSS_2.0 ATOM_1.0

55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr

COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

BROWSE

한국어