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Write Recovery Time Degradation by Thermal Neutrons in DDR4 DRAM Components
- Authors
- Oh, Hyeongseok; Chun, Myungsun; Lee, Jiwon; Wen, Shi-Jie; Yu, Nick; Park, Byung-Gun; Baeg, Sanghyeon
- Issue Date
- May-2023
- Publisher
- IEEE
- Keywords
- Dynamic random-access memory (DRAM); write recovery time; thermal neutron; displacement damage
- Citation
- IEEE International Reliability Physics Symposium Proceedings, v.2023-March, pp 1 - 6
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE International Reliability Physics Symposium Proceedings
- Volume
- 2023-March
- Start Page
- 1
- End Page
- 6
- ISSN
- 1541-7026
- Abstract
- In this study, a thermal neutron (TN) radiation test was conducted for DRAM devices of 1y nm technology. Accordingly, the write recovery time (tWR) degradation was observed to range from 1-ns (degradation) to more than 15 ns (failure). Specifically, permanent timing degradation is expected, owing to secondary particles generated from the interactions of B-10 and TN. The samples from two manufacturers were compared and exhibited an 8.9 times maximum difference in the degradation cross-section.
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Related Researcher
- Baeg, Sanghyeon
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)