Electrical Characteristics of SiO2/4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jo, Yoo Jin | - |
dc.contributor.author | Moon, Jeong Hyun | - |
dc.contributor.author | Seok, Ogyun | - |
dc.contributor.author | Bahng, Wook | - |
dc.contributor.author | Park, Tae Joo | - |
dc.contributor.author | Ha, Min-Woo | - |
dc.date.accessioned | 2021-06-22T14:23:05Z | - |
dc.date.available | 2021-06-22T14:23:05Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2017-04 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/10067 | - |
dc.description.abstract | 4H-SiC has attracted attention for highpower and high-temperature metal-oxide-semicon-ductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above 1000 degrees C, thermal oxidation initiates SiO2 layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown SiO2 on 4H-SiC is limited by high oxide charges due to carbon clusters at the SiC/SiO2 interface and near-interface states in SiO2; this can be resolved via lowtemperature deposition. In this study, lowtemperature SiO2 deposition on a Si substrate was optimized for SiO2/4H-SiC MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The SiO2/4H-SiC MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | 대한전자공학회 | - |
dc.title | Electrical Characteristics of SiO2/4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2 | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae Joo | - |
dc.identifier.doi | 10.5573/JSTS.2017.17.2.265 | - |
dc.identifier.scopusid | 2-s2.0-85018724835 | - |
dc.identifier.wosid | 000406938600017 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.17, no.2, pp.265 - 270 | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 17 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 265 | - |
dc.citation.endPage | 270 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002216908 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordAuthor | C-V | - |
dc.subject.keywordAuthor | effective oxide charge density | - |
dc.subject.keywordAuthor | gate leakage current | - |
dc.subject.keywordAuthor | hysteresis | - |
dc.subject.keywordAuthor | MOS | - |
dc.subject.keywordAuthor | SiC | - |
dc.subject.keywordAuthor | SiO2 | - |
dc.identifier.url | http://koreascience.or.kr/article/JAKO201715853764218.page | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.