Highly Sensitive, Gate-Tunable, Room-Temperature Mid-Infrared Photodetection Based on Graphene-Bi2Se3 Heterostructure
- Authors
- Kim, Jaeseok; Park, Sungjoon; Jang, Houk; Koirala, Nikesh; Lee, Jae-Bok; Kim, Un Jeong; Lee, Hong-Seok; Roh, Young-Geun; Lee, Hyangsook; Sim, Sangwan; Cha, Soonyoung; In, Chihun; Park, Jun; Lee, Jekwan; Noh, Minji; Moon, Jisoo; Salehi, Maryam; Sung, Jiho; Chee, Sang-Soo; Ham, Moon-Ho; Jo, Moon-Ho; Oh, Seongshik; Ahn, Jong-Hyun; Hwang, Sung Woo; Kim, Dohun; Choi, Hyunyong
- Issue Date
- Mar-2017
- Publisher
- American Chemical Society
- Keywords
- photodetectors; mid-infrared photodetection; topological insulators; graphene; heterostructure; photogating effect
- Citation
- ACS Photonics, v.4, no.3, pp.482 - 488
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS Photonics
- Volume
- 4
- Number
- 3
- Start Page
- 482
- End Page
- 488
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/10136
- DOI
- 10.1021/acsphotonics.6b00972
- Abstract
- Broadband detection of mid-infrared (IR) photons extends to advanced optoelectronic applications such as imaging, sensing, and telecommunications. While graphene offers an attractive platform for broadband visible/IR photodetection, previous efforts to improve its responsivity, for example, by integrating light-absorbing colloids or waveguide or antenna fabrication, were achieved at the cost of reduced photon detection bandwidth. In this work, we demonstrate room-temperature operation of a novel mid-IR photodetector based on a graphene-Bi2Se3 heterostructure showing broadband detection and high responsivity (1.97 and 8.18 A/W at mid-and near-IR, respectively), in which simultaneous improvement of the spectral range and responsivity is achieved via exploiting broadband absorption of mid-1R and IR photons in a small-band-gap Bi2Se3 topological insulator and efficient hot carrier separation and strong photogating across the Bi2Se3/graphene interface. With sufficient room for further improvement by interface engineering, our results show a promising route to realize ultrabroadband, high-responsivity hot-carrier optoelectronics at room temperature.
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