Effect of annealing temperature on switching properties in Si-doped HfO2 films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, S. | - |
dc.contributor.author | Chun, M.C. | - |
dc.contributor.author | Kim, M.J. | - |
dc.contributor.author | Lee, J.Y. | - |
dc.contributor.author | Cho, Y. | - |
dc.contributor.author | Kim, C. | - |
dc.contributor.author | Jo, J.Y. | - |
dc.contributor.author | Kang, B.S. | - |
dc.date.accessioned | 2021-07-28T08:12:16Z | - |
dc.date.available | 2021-07-28T08:12:16Z | - |
dc.date.created | 2021-07-14 | - |
dc.date.issued | 2021-04 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/105805 | - |
dc.description.abstract | The discovery of hafnium oxide-based ferroelectrics has resulted in the pursuit of ferroelectric field-effect transistors with higher scalability, lower power consumption, and enhanced switching speed. An in-depth understanding of ferroelectric polarization switching kinetics is essential for both scientific and technological purposes. Polarization switching is analyzed based on the nucleation-limited switching model with a Lorentzian distribution of logarithmic switching times. The activation field governing the switching kinetics is explained by a dependence on the density of oxygen vacancies, which are caused by various annealing temperatures. This indicates that oxygen vacancies can be a dominant factor in the polarization switching of Si-doped HfO2 films. © 2021 Author(s). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Institute of Physics Inc. | - |
dc.title | Effect of annealing temperature on switching properties in Si-doped HfO2 films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, B.S. | - |
dc.identifier.doi | 10.1063/5.0039446 | - |
dc.identifier.scopusid | 2-s2.0-85104861149 | - |
dc.identifier.wosid | 000692748800001 | - |
dc.identifier.bibliographicCitation | Journal of Applied Physics, v.129, no.16, pp.1 - 10 | - |
dc.relation.isPartOf | Journal of Applied Physics | - |
dc.citation.title | Journal of Applied Physics | - |
dc.citation.volume | 129 | - |
dc.citation.number | 16 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NEGATIVE CAPACITANCE | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | WAKE-UP | - |
dc.subject.keywordPlus | FERROELECTRIC PROPERTIES | - |
dc.subject.keywordPlus | HAFNIUM OXIDE | - |
dc.subject.keywordPlus | FIELD | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/5.0039446 | - |
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