Enhancement of the Electrical Performance and Bias Stability of RF-Sputtered Indium Tin Zinc Oxide Thin-Film Transistors with Vertical Stoichiometric Oxygen Control
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jeongho | - |
dc.contributor.author | Jin, Jidong | - |
dc.contributor.author | Maeng, Seohyun | - |
dc.contributor.author | Choi, Gisang | - |
dc.contributor.author | Kim, Hayoung | - |
dc.contributor.author | Kim, Jaekyun | - |
dc.date.accessioned | 2022-07-18T01:16:22Z | - |
dc.date.available | 2022-07-18T01:16:22Z | - |
dc.date.issued | 2022-04 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/107885 | - |
dc.description.abstract | Indium tin zinc oxide (ITZO) thin-film transistors (TFTs) with different channel structures are investigated. The electrical performance and bias stress stability of bilayer-channel ITZO TFTs are enhanced in comparison with those of single-channel ITZO TFTs. The bilayer channel consists of an oxygen-uncompensated channel layer and an oxygen-compensated capping layer, while the single channel is an oxygen-uncompensated channel layer. The electrical properties of the bilayer-channel films are fine-tuned by adjusting their oxygen stoichiometry using the oxygen-compensated capping layer. The X-ray photoelectron spectroscopy measurements reveal that the bilayer channel shows advantages over the single channel in terms of increased metal oxide concentration and decreased oxygen vacancy and hydroxyl concentration. As a result, the bilayer-channel ITZO TFT exhibits a saturation field-effect mobility of 17.31 cm(2)/Vs, a sub-threshold swing of 0.24 V/dec, and a good operational bias stress stability in comparison with the single-channel TFT. This work demonstrates that the bilayer-channel ITZO TFTs have great potential for next-generation display applications. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Enhancement of the Electrical Performance and Bias Stability of RF-Sputtered Indium Tin Zinc Oxide Thin-Film Transistors with Vertical Stoichiometric Oxygen Control | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1021/acsaelm.2c00054 | - |
dc.identifier.scopusid | 2-s2.0-85129110076 | - |
dc.identifier.wosid | 000795902800044 | - |
dc.identifier.bibliographicCitation | ACS Applied Electronic Materials, v.4, no.4, pp 1800 - 1806 | - |
dc.citation.title | ACS Applied Electronic Materials | - |
dc.citation.volume | 4 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1800 | - |
dc.citation.endPage | 1806 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | indium tin zinc oxide (ITZO) | - |
dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
dc.subject.keywordAuthor | bilayer channel | - |
dc.subject.keywordAuthor | bias stress stability | - |
dc.subject.keywordAuthor | oxygen compensation | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsaelm.2c00054?src=getftr | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.