Enhancement of the Electrical Performance and Bias Stability of RF-Sputtered Indium Tin Zinc Oxide Thin-Film Transistors with Vertical Stoichiometric Oxygen Control
- Authors
- Lee, Jeongho; Jin, Jidong; Maeng, Seohyun; Choi, Gisang; Kim, Hayoung; Kim, Jaekyun
- Issue Date
- Apr-2022
- Publisher
- AMER CHEMICAL SOC
- Keywords
- indium tin zinc oxide (ITZO); thin-film transistors (TFTs); bilayer channel; bias stress stability; oxygen compensation
- Citation
- ACS Applied Electronic Materials, v.4, no.4, pp 1800 - 1806
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS Applied Electronic Materials
- Volume
- 4
- Number
- 4
- Start Page
- 1800
- End Page
- 1806
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/107885
- DOI
- 10.1021/acsaelm.2c00054
- ISSN
- 2637-6113
2637-6113
- Abstract
- Indium tin zinc oxide (ITZO) thin-film transistors (TFTs) with different channel structures are investigated. The electrical performance and bias stress stability of bilayer-channel ITZO TFTs are enhanced in comparison with those of single-channel ITZO TFTs. The bilayer channel consists of an oxygen-uncompensated channel layer and an oxygen-compensated capping layer, while the single channel is an oxygen-uncompensated channel layer. The electrical properties of the bilayer-channel films are fine-tuned by adjusting their oxygen stoichiometry using the oxygen-compensated capping layer. The X-ray photoelectron spectroscopy measurements reveal that the bilayer channel shows advantages over the single channel in terms of increased metal oxide concentration and decreased oxygen vacancy and hydroxyl concentration. As a result, the bilayer-channel ITZO TFT exhibits a saturation field-effect mobility of 17.31 cm(2)/Vs, a sub-threshold swing of 0.24 V/dec, and a good operational bias stress stability in comparison with the single-channel TFT. This work demonstrates that the bilayer-channel ITZO TFTs have great potential for next-generation display applications.
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
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