Atomic-layer-deposited ZnSnO buffer layers for kesterite solar cells: Impact of Zn/(Zn plus Sn) ratio on device performance
- Authors
- Cho, Jae Yu; Jang, Jun Sung; Karade, Vijay C.; Nandi, Raju; Pawar, Pravin S.; Seok, Tae-Jun; Moon, Wonjin; Park, Tae Joo; Kim, Jin Hyeok; Heo, Jaeyeong
- Issue Date
- Feb-2022
- Publisher
- Elsevier BV
- Keywords
- CZTSSe; ALD; Buffer layers; Efficiency
- Citation
- Journal of Alloys and Compounds, v.895, pp.1 - 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Alloys and Compounds
- Volume
- 895
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/107992
- DOI
- 10.1016/j.jallcom.2021.162651
- ISSN
- 0925-8388
- Abstract
- Atomic layer deposition (ALD) has been used to synthesize earth-abundant and non-toxic ZnSnO thin films as potential replacements for CdS buffer layers in thin-film solar cells. In this study, ALD ZnSnO films with various Zn/(Zn+Sn) ratios ranging from 0.66 to 0.96 were synthesized and their application as buffer layers in CZTSSe solar cells was investigated. The solar cells fabricated with ZnSnO buffer layers exhibit a significant improvement in short-circuit current density (J(sc)) compared to the CdS-buffered reference device, primarily due to the wide band gap and high transparency of ZnSnO films. The CZTSSegnSnO solar cell results also demonstrated that the device parameters, particularly the open-circuit voltage (V-oc) and fill factor (FF), were significantly affected by the Zn/(Zn+Sn) ratio. A cell efficiency of 8.54% with a V-oc of 0.436 V, J(sc) of 32.98 mA cm(-2), and FF of 0.59 was obtained with ALD ZnSnO buffer layer with an optimal Zn/(Zn+Sn) ratio of 0.76. Increasing or decreasing the Zn/(Zn+Sn) ratio leads to a gradual decrease in the FF and V-oc values, which eventually deteriorates device performance. Additionally, the uniform and conformal ALD process results in superior cell-to-cell uniformity for ZnSnO-buffered devices compared to chemicalbath-deposited CdS buffer layers. (C) 2021 Elsevier B.V. All rights reserved.
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