Emerging laser-assisted vacuum processes for ultra-precision, high-yield manufacturing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, Eunseung | - |
dc.contributor.author | Choi, Joonmyung | - |
dc.contributor.author | Hong, Sukjoon | - |
dc.date.accessioned | 2022-12-20T04:35:13Z | - |
dc.date.available | 2022-12-20T04:35:13Z | - |
dc.date.issued | 2022-11 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.issn | 2040-3372 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/111167 | - |
dc.description.abstract | Laser technology is a cutting-edge process with a unique photothermal response, precise site selectivity, and remote controllability. Laser technology has recently emerged as a novel tool in the semiconductor, display, and thin film industries by providing additional capabilities to existing high-vacuum equipment. The in situ and in operando laser assistance enables using multiple process environments with a level of complexity unachievable with conventional vacuum equipment. This broadens the usable range of process parameters and directly improves material properties, product precision, and device performance. This review paper examines the recent research trends in laser-assisted vacuum processes (LAVPs) as a vital tool for innovation in next-generation manufacturing processing equipment and addresses the unique characteristics and mechanisms of lasers exclusively used in each study. All the findings suggest that the LAVP can lead to methodological breakthroughs in dry etching, 2D material synthesis, and chemical vapor deposition for optoelectronic devices. | - |
dc.format.extent | 12 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Royal Society of Chemistry | - |
dc.title | Emerging laser-assisted vacuum processes for ultra-precision, high-yield manufacturing | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1039/d2nr03649e | - |
dc.identifier.scopusid | 2-s2.0-85141670928 | - |
dc.identifier.wosid | 000871615400001 | - |
dc.identifier.bibliographicCitation | Nanoscale, v.14, no.43, pp 16065 - 16076 | - |
dc.citation.title | Nanoscale | - |
dc.citation.volume | 14 | - |
dc.citation.number | 43 | - |
dc.citation.startPage | 16065 | - |
dc.citation.endPage | 16076 | - |
dc.type.docType | Review | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | WAFER-SCALE INTEGRATION | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | WALLED CARBON NANOTUBES | - |
dc.subject.keywordPlus | 2-DIMENSIONAL MATERIALS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | SILICON | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2022/NR/D2NR03649E | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.