Equivalent oxide thickness scalability of Zr-rich ZrHfO2 thin films by Al-doping
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Min Ji | - |
dc.contributor.author | Lee, Seung Won | - |
dc.contributor.author | Kim, Hyo-Bae | - |
dc.contributor.author | Oh, Youkyoung | - |
dc.contributor.author | Lee, Ju Hun | - |
dc.contributor.author | Ahn, Ji-Hoon | - |
dc.date.accessioned | 2022-12-20T05:50:20Z | - |
dc.date.available | 2022-12-20T05:50:20Z | - |
dc.date.issued | 2022-08 | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.issn | 1873-4979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/111299 | - |
dc.description.abstract | With ultra-miniaturization of dynamic random-access memory (DRAM), it is very important to achieve equivalent-oxide-thickness (EOT) scaling of capacitors using materials applied to mass production. Compared to ZrO2, Zr1-xHfxO2 has a high possibility of improved electrical properties by doping in wide composition ranges. Therefore, we investigated the effect of Al-doping on electrical properties of Zr-rich Zr1-xHfxO2 thin films. Up to Al-doping of 2.1%, the leakage current was significantly improved without degradation of the dielectric constant, and it was possible to reduce the EOT by 0.12 nm in the leakage current specification applicable to DRAM capacitors. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Elsevier BV | - |
dc.title | Equivalent oxide thickness scalability of Zr-rich ZrHfO2 thin films by Al-doping | - |
dc.type | Article | - |
dc.publisher.location | 네델란드 | - |
dc.identifier.doi | 10.1016/j.matlet.2022.132418 | - |
dc.identifier.scopusid | 2-s2.0-85129981572 | - |
dc.identifier.wosid | 000800427100005 | - |
dc.identifier.bibliographicCitation | Materials Letters, v.321, pp 1 - 3 | - |
dc.citation.title | Materials Letters | - |
dc.citation.volume | 321 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | DRAM | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | NM | - |
dc.subject.keywordAuthor | DRAM capacitor | - |
dc.subject.keywordAuthor | Zr 1-x Hf x O- 2 thin films | - |
dc.subject.keywordAuthor | Dielectric constant | - |
dc.subject.keywordAuthor | Leakage current | - |
dc.subject.keywordAuthor | ALD | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167577X22007716?pes=vor | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.