Low-Voltage, High-Performance, Indium-Tin-Zinc-Oxide Thin-Film Transistors Based on Dual-Channel and Anodic-Oxide
DC Field | Value | Language |
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dc.contributor.author | Jin, Jidong | - |
dc.contributor.author | Lin, Xiaoyu | - |
dc.contributor.author | Zhang, Jiawei | - |
dc.contributor.author | Lee, Jeongho | - |
dc.contributor.author | Xiao, Zhenyuan | - |
dc.contributor.author | Lee, Soobin | - |
dc.contributor.author | Kim, Jaekyun | - |
dc.date.accessioned | 2023-01-25T09:16:29Z | - |
dc.date.available | 2023-01-25T09:16:29Z | - |
dc.date.issued | 2023-03 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/111454 | - |
dc.description.abstract | Oxide semiconductor thin-film transistors (TFTs) with low-voltage operation, excellent device performance, and bias stability are highly desirable for portable and wearable electronics. Here, the development of low-voltage indium-tin-zinc-oxide (ITZO) TFTs with excellent device performance and bias stability based on a dual-channel layer and an anodic-oxide dielectric layer are reported. An ultra-thin anodic AlxOy film as a gate dielectric layer is prepared using an anodization process. The dual-channel layer consists of an oxygen-uncompensated channel layer and an oxygen-compensated capping layer. It is confirmed that the dual-channel structure is effective for enhancing device performance and bias stability in comparison with the single-channel structure. As a result, the dual-channel ITZO TFT gated with anodic AlxOy exhibits an effective saturation mobility of 12.56 cm(2) Vs(-1), a threshold voltage of 0.28 V, a subthreshold swing of 76 mV dec(-1), a low-voltage operation of 1 V, and good operational stability (threshold voltage shift (Delta V-TH) V-TH < 0.15 under positive gate bias stress of 3600 s). The work shows that the ITZO TFTs, based on a dual-channel layer and an anodic-oxide gate dielectric layer, have great potential for low-power, portable, and wearable electronics. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Wiley-VCH Verlag | - |
dc.title | Low-Voltage, High-Performance, Indium-Tin-Zinc-Oxide Thin-Film Transistors Based on Dual-Channel and Anodic-Oxide | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1002/aelm.202201117 | - |
dc.identifier.scopusid | 2-s2.0-85145281174 | - |
dc.identifier.wosid | 000904955400001 | - |
dc.identifier.bibliographicCitation | Advanced Electronic Materials, v.9, no.3, pp 1 - 7 | - |
dc.citation.title | Advanced Electronic Materials | - |
dc.citation.volume | 9 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRICAL PERFORMANCE | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordAuthor | indium-tin-zinc-oxide | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | anodization | - |
dc.subject.keywordAuthor | anodic oxide | - |
dc.subject.keywordAuthor | dual channel | - |
dc.subject.keywordAuthor | low voltage operation | - |
dc.subject.keywordAuthor | bias stress stability | - |
dc.subject.keywordAuthor | oxygen compensation | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/aelm.202201117 | - |
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