Low-Voltage, High-Performance, Indium-Tin-Zinc-Oxide Thin-Film Transistors Based on Dual-Channel and Anodic-Oxide
- Authors
- Jin, Jidong; Lin, Xiaoyu; Zhang, Jiawei; Lee, Jeongho; Xiao, Zhenyuan; Lee, Soobin; Kim, Jaekyun
- Issue Date
- Mar-2023
- Publisher
- Wiley-VCH Verlag
- Keywords
- indium-tin-zinc-oxide; thin film transistors; anodization; anodic oxide; dual channel; low voltage operation; bias stress stability; oxygen compensation
- Citation
- Advanced Electronic Materials, v.9, no.3, pp 1 - 7
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- Advanced Electronic Materials
- Volume
- 9
- Number
- 3
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/111454
- DOI
- 10.1002/aelm.202201117
- ISSN
- 2199-160X
- Abstract
- Oxide semiconductor thin-film transistors (TFTs) with low-voltage operation, excellent device performance, and bias stability are highly desirable for portable and wearable electronics. Here, the development of low-voltage indium-tin-zinc-oxide (ITZO) TFTs with excellent device performance and bias stability based on a dual-channel layer and an anodic-oxide dielectric layer are reported. An ultra-thin anodic AlxOy film as a gate dielectric layer is prepared using an anodization process. The dual-channel layer consists of an oxygen-uncompensated channel layer and an oxygen-compensated capping layer. It is confirmed that the dual-channel structure is effective for enhancing device performance and bias stability in comparison with the single-channel structure. As a result, the dual-channel ITZO TFT gated with anodic AlxOy exhibits an effective saturation mobility of 12.56 cm(2) Vs(-1), a threshold voltage of 0.28 V, a subthreshold swing of 76 mV dec(-1), a low-voltage operation of 1 V, and good operational stability (threshold voltage shift (Delta V-TH) V-TH < 0.15 under positive gate bias stress of 3600 s). The work shows that the ITZO TFTs, based on a dual-channel layer and an anodic-oxide gate dielectric layer, have great potential for low-power, portable, and wearable electronics.
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